2SC2383 transistor (npn) feature power dissipation p cm : 0.9 w (tamb=25 ) collector current i cm: 1 a collector-base voltage v (br)cbo : 160 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a , i e =0 160 v collector-emitter breakdown voltage v(br) ceo i c = 10 ma , i b =0 160 v emitter-base breakdown voltage v(br) ebo i e = 10a, i c =0 6 v collector cut-off current i cbo v cb =150 v , i e =0 1 a collector cut-off current i cer v cb =150 v , r eb = 10m ? 10 a emitter cut-off current i ebo v eb =6v, ic=0 1 a dc current gain h fe v ce =5 v, ic= 200ma 60 320 collector-emitter saturation voltage v ce(sat) i c = 500m a, i b = 50ma 1 v base-emitter voltage v be i c = 5 ma, vce= 5v 0.75 v transition frequency f t v ce = 5 v, i c = 200ma 20 mhz classification of h fe rank r o y range 60-120 100-200 160-320 to-92mod 1. emitter 2. collector 3. base 123 2SC2383 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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